Scattering in nanotransistors: A numerical study

We numerically study the influence of scattering along the channel and extension regions of dual gate nano-MOSFETs. It is found that the reduction in drain current due to scattering in the right half of the channel is comparable to the reduction in drain current due to scattering in the left half of the channel, when the channel length is comparable to the scattering length. As the channel length becomes much larger than the scattering length, scattering in the drain-end is less detrimental to the drive current than scattering near the source-end of the channel. We find that even for a MOSFET with a 25 nm channel length, scattering is important throughout the channel. Finally, we show that for nano-MOSFETs the extension regions cannot be modeled as simple series resistances. Submitted to ”IEEE Transaction in Electron Devices on Electron Device” 02/04/02; Resubmitted on 10/04/02. February 29, 2008 DRAFT IEEE TRANSACTIONS IN ELECTRON DEVICES 3